SHALLOW P-N-JUNCTIONS PRODUCED BY LASER DOPING WITH BORON SILICATE GLASS

Authors
BOLLMANN D NEUMAYER G BUCHNER R HABERGER K
Citation
D. Bollmann et al., SHALLOW P-N-JUNCTIONS PRODUCED BY LASER DOPING WITH BORON SILICATE GLASS, Applied surface science, 69(1-4), 1993, pp. 249-252
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
69
Issue
1-4
Year of publication
1993
Pages
249 - 252
Database
ISI
SICI code
0169-4332(1993)69:1-4<249:SPPBLD>2.0.ZU;2-H
Abstract
Shallow junctions have been fabricated using an excimer and a CO2 lase r as heating source. The diffusion was made out of a silicate glass la yer. The produced diodes were electrically characterized. The concentr ation profiles measured by SIMS agree with simulations by ICECREM and have a depth of about 100 nm.