THE ROLE OF SILANE AND N2O IN THE CO2 LASER-CVD OF SILICON-OXIDE FILMS

Authors
FERNANDEZ D GONZALEZ P POU J GARCIA E SERRA J LEON B PEREZAMOR M
Citation
D. Fernandez et al., THE ROLE OF SILANE AND N2O IN THE CO2 LASER-CVD OF SILICON-OXIDE FILMS, Applied surface science, 69(1-4), 1993, pp. 281-284
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
69
Issue
1-4
Year of publication
1993
Pages
281 - 284
Database
ISI
SICI code
0169-4332(1993)69:1-4<281:TROSAN>2.0.ZU;2-B
Abstract
The laser-CVD of silicon oxide films on silicon substrates has been ca rried out using a CW-CO2 laser in a parallel configuration, and with S iH4 and N2O as precursor gases. In this paper we report the influence of the reactant partial pressures on the film growth rate. The individ ual apparent orders of the chemical reaction for SiH4 and N2O have bee n determined.