DETERMINATION OF THE REFRACTIVE-INDEX OF IN0.53AL0.11GA0.36 AS ON INPIN THE WAVELENGTH RANGE FROM 280 TO 1900 NM BY SPECTROSCOPIC ELLIPSOMETRY

Authors
DINGES HW BURKHARD H LOSCH R NICKEL H SCHLAPP W
Citation
Hw. Dinges et al., DETERMINATION OF THE REFRACTIVE-INDEX OF IN0.53AL0.11GA0.36 AS ON INPIN THE WAVELENGTH RANGE FROM 280 TO 1900 NM BY SPECTROSCOPIC ELLIPSOMETRY, Applied surface science, 69(1-4), 1993, pp. 355-358
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
69
Issue
1-4
Year of publication
1993
Pages
355 - 358
Database
ISI
SICI code
0169-4332(1993)69:1-4<355:DOTROI>2.0.ZU;2-2
Abstract
The refractive index of the quarternary material In0.53Al0.11Ga0.36As/ InP is measured for the first time by spectroscopic ellipsometry in th e wavelength range from 280 to 1900 nm. In previous papers we found ou t that between InP and MBE-grown In0.52Al0.48As or In0.53Ga0.47As an i nterface layer exists, due to the interaction of arsenic with InP in t he preheat phase of the MBE growth. Therefore we grew three layers of In0.53Al0.11Ga0.36As on InP with different thicknesses to determine th e refractive indices and exact values of the thicknesses.