Investigations concerning the laser-induced chemical vapour deposition
of TiSi2 thin films from SiH4 and TiCl4 using a direct writing method
are presented. A CO2-laser at lambda = 10.6 mum and an argon ion lase
r in the VIS (488-527 nm, multiline mode) were used for the preferably
thermal deposition on SiO2 and c-Si substrates. The influence of the
deposition parameters gas composition, laser power, scan velocity and
laser wavelength on structural, geometric, and electrical properties i
s reported.