Using low-stress pseudoshear deformation, we measured the ambient-temp
erature creep-recovery behavior of polycrystalline indium. The epsilon
-sigma diagram shows three regions with increasing stress: stress expo
nents of 1.05, 7.4, and 2.0. The diagram resembles remarkably the disl
ocation-velocity-shear-stress diagrams reported for various materials
by many authors, who interpreted the diagrams by dislocation dynamics.
Applying an extended Burgers model (two Kelvin-Voigt elements) gave f
or the three regions the following relaxation times tau(2) and tau(3)
(in seconds): (1) 11, 123; (2) 10, 132; (3) 12, 154. Thus, tau(1) is n
early stress independent, and tau(2) increases with increasing stress.
Laplacean transformation of our epsilon(t) measurements to get the re
tardation-time distribution function g(In tau) indicates in all three
regions a strong peak near tau(2)=3 s and a weaker, broader peak near
tau(3)=150 s. These agree surprisingly well with the Burgers dashpot-s
pring-model results. We analyzed the recovery part of the strain epsil
on(t) to obtain Q(-1)(f) curves.