DEPTH PROFILES OF ION-IMPLANTED FLUORINE IN TIN-OXIDE FILMS PREPARED BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR DEPOSITION

Depth profiles of fluorine in F-19+-implanted tin-oxide films have bee n accurately measured using F-19(p,alphagamma)O-16 resonance nuclear r eactions at E(R) = 872.1 keV and E(R) = 340.46 keV. A proper deconvolu tion calculation method was used to extract the true range distributio n of implanted fluorine from the experimental excitation yield curves. The range distribution parameters, R(P) and DELTAR(p), were thereby o btained and were compared with those obtained by Monte Carlo simulatio ns. The experimental R(p) values agree with the Monte Carlo simulation values very well, while the experimental DELTAR(p) values are larger than those obtained theoretically. This phenomenon may be attributed t o the enhanced diffusion during the ion implantation.