ABINITIO ANALYSIS OF THE ELECTRON-PHONON INTERACTION IN SILICON

A Harris functional approach is used to investigate the electron-phono n interaction in silicon, within the rigid ion approximation. The nece ssary lattice dynamics are solved via the valence shell model. The ele ctron-phonon matrix elements for transitions between selected electron ic states are calculated, and equivalent deformation potentials are pr esented and compared with results of other models. The resulting defor mation potentials exhibit significant dispersion throughout much of th e Brillouin zone, though remain nearly constant for intervalley transi tions between states close to the conduction band minima. The overall value of the deformation potentials is somewhat higher than found in p revious models and thus in better agreement with experiment.