PASSIVATION OF GAAS (100) USING SELENIUM SULFIDE

The chemical and electronic aspects of a Ga-As (100) surface passivate d by selenium sulfide (SeS2) have been investigated by x-ray photoelec tron spectroscopy and photoluminescence. It has been observed that thi s treatment gives rise to an arsenic selenide (As2Se3) terminated surf ace. No S-GaAs bonds were observed. The remarkable electronic properti es and the formation of the chemically and thermally stable As2Se3 pha se reveals the successful passivation. Passivation of GaAs in single s tep and identification of a single selenium species on the surface are considered to be the major advantages of using SeS2.