2-DIMENSIONAL ELECTRON-TRANSPORT IN SELECTIVELY DOPED N-ALGAAS INGAAS/GAAS PSEUDOMORPHIC STRUCTURES/

The transport properties of the two-dimensional electron gas in select ively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high -field magnetoconductance measurements. The relative strengths of vari ous scattering mechanisms are assessed through a numerical iterative s olution of the Boltzmann equation and compared with the experimental H all mobility versus temperature data. Comparison shows that at low tem perature, alloy scattering determines the low-field mobility with a su itable choice of alloy scattering potential. At room temperature, pola r-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.