ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY OF ELECTRON AND HOLE EMISSIONS FROM INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

Isothermal capacitance transient spectroscopy has been expansively app lied to the study of interface states in metal-oxide-semiconductor (MO S) transistors. We propose a simple technique to precisely measure the emission transient of both majority carriers and minority carriers us ing the identical Si-MOS transistor. We have improved on a conventiona l technique to measure the emission transient of minority carriers to solve a few problems. The emission transient of majority carriers is m easured after applying the injection pulse to the gate electrode as us ual. Similarly, the emission transient of minority carriers is measura ble merely by reversing the injection-pulse polarity. The validity of the proposed technique has been demonstrated with the use of Au-diffus ed Si-MOS transistors. As a result, the density of the interface state s has been determined over the energy range from E(u) + 0.30 eV to E(c ) - 0.24 eV using the very same Si-MOS transistor.