COMMENTS ON THE THERMOELECTRIC PROPERTIES OF PRESSURE-SINTERED SI0.8GE0.2 THERMOELECTRIC ALLOYS

Authors
ROWE DM FU LW WILLIAMS SGK
Citation
Dm. Rowe et al., COMMENTS ON THE THERMOELECTRIC PROPERTIES OF PRESSURE-SINTERED SI0.8GE0.2 THERMOELECTRIC ALLOYS, Journal of applied physics, 73(9), 1993, pp. 4683-4685
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
73
Issue
9
Year of publication
1993
Pages
4683 - 4685
Database
ISI
SICI code
0021-8979(1993)73:9<4683:COTTPO>2.0.ZU;2-4
Abstract
The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regardin g the effect of grain size on the thermoelectric figure of merit of he avily doped p-type silicon germanium alloys are compared to earlier re sults on similar materials. The data confirm that the room-temperature figure-of-merit is significantly increased in materials with a small grain size.