Wm. Chen et al., THERMAL-STABILITY AND DOPANT DRIVE-OUT CHARACTERISTICS OF COSI2 POLYCIDE GATES, Journal of applied physics, 73(9), 1993, pp. 4712-4714
BF2-implanted CoSi2 Polycide gates that are stable at high temperature
s up to 1000-degrees-C have been fabricated. The use of CoSi2 polycide
as a boron diffusion source was evaluated using a metal-oxide-semicon
ductor capacitor structure on a p-type Si substrate. This structure is
useful in monitoring the diffusion of the electrically activated dopa
nts from the silicide towards the polycrystalline silicon-SiO2 interfa
ce. Our results show that using BF2-implanted CoSi2 as a diffusion sou
rce is effective in doping polycrystalline silicon gates degenerately
without any degradation of the polycide resistivity.