STRONG-FIELD EFFECT IN NANOFABRICATION ON CHEMICALLY PREPARED SILICON

Authors
HETRICK JM ZHENG X NAYFEH MH
Citation
Jm. Hetrick et al., STRONG-FIELD EFFECT IN NANOFABRICATION ON CHEMICALLY PREPARED SILICON, Journal of applied physics, 73(9), 1993, pp. 4721-4723
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
73
Issue
9
Year of publication
1993
Pages
4721 - 4723
Database
ISI
SICI code
0021-8979(1993)73:9<4721:SEINOC>2.0.ZU;2-T
Abstract
We investigate the uniformity of scanning tunneling microscope nanofab rication on as-prepared chemically etched silicon. Our results show th at continuous fabrication produces isolated nanoscale dots along the m otion of the tip rather than uniform lines. These results are discusse d with the aid of a self-limiting strong-field effect.