Internal friction of (SiO2)(1-x) (GeO2)(x) glasses (x = 0, 5, 10, 24 a
nd 100 mole% is measured at temperatures between 1.6 and 280 K. The da
ta are fitted with the equations for thermally activated relaxation wi
th distributing activation energies in symmetrical double-well potenti
als. From the determined relaxation strength spectra for each sample,
the contributions from each type of microscopic structural units are c
alculated assuming that transverse motion of the bridging 0 atom in Si
-O-Si, Si-O-Ge or Ge-O-Ge bridge CT model) is the microscopic unit res
ponsible for relaxation. For instance, the magnitude of internal frict
ion for SiO2-5% GeO2 or 24% GeO2 is calculated from the data of pure S
iO2, SiO2-10% GeO2 and pure GeO2. The calculated results agree well wi
th the measurements of SiO2-5% GeO2 and SiO2-44% GdO2. Thus T model is
shown to be quantitatively consistent with internal friction of SiO2-
GeO2 binary glasses.