PHOTOACOUSTIC INVESTIGATIONS OF SHALLOW ACCEPTORS IN SILICON BY A PIEZOELECTRIC TRANSDUCER

Authors
IKARI T MIYAZAKI K SHIGETOMI S FUTAGAMI K
Citation
T. Ikari et al., PHOTOACOUSTIC INVESTIGATIONS OF SHALLOW ACCEPTORS IN SILICON BY A PIEZOELECTRIC TRANSDUCER, IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 40(2), 1993, pp. 110-113
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic",Acoustics
Journal title
IEEE transactions on ultrasonics, ferroelectrics, and frequency control → ACNP
ISSN journal
08853010
Volume
40
Issue
2
Year of publication
1993
Pages
110 - 113
Database
ISI
SICI code
0885-3010(1993)40:2<110:PIOSAI>2.0.ZU;2-O
Abstract
Photoacoustic (PA) measurements of p-Si single crystals near an optica l absorption edge were carried out by using a PZT as a detector. A pro nounced peak at 1.07 eV appears in addition to the plateau above 1.2 e V. A hole carrier concentration dependence and a compensation effect b y thermally generated donors of the PA spectrum are investigated exten sively. By considering these results, it is concluded that the observe d peak is due to electron transitions involving boron acceptor impurit ies. Low temperature spectra down to 90 K also support this conclusion .