CHARACTERISTICS OF TIN FILMS SPUTTERED UNDER OPTIMIZED CONDITIONS OF METALLIC MODE DEPOSITION

We prepared TiN films by metallic or nitride mode sputtering using a c ollimator, and investigated the characteristics of the alms. Resistivi ty, density, thermal stress, X-ray photoelectron spectroscopy (XPS); X -ray diffraction (XRD) measurements and transmission electron microsco pe (TEM) observation were carried out. The characteristics of the TiN films depended on the N-2/Ar flow ratio. TiN deposition rates in the m etallic mode with N-2/Ar flow ratios from 0.2 to 0.5 were 3 times high er than those in the conventional nitride mode with N-2/Ar ratios from 0.75 to 1.0. By depositing the film under the best metallic mode cond itions with N-2/Ar=0.5; the TiN film with a minimum resistivity and a maximum film density was formed. The TiN films, which were prepared un der optimized conditions of metallic mode deposition, had a small conc entration of oxide in the TiN, strong (Ill)-preferred orientation and good crystallinity.