MIDINFRARED PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL INAS1-YSBY INAS MULTILAYERS/

Photoluminescence for InAs1-ySby multilayers grown on InAs substrates by Liquid phase epitaxy has been investigated. A 5 K luminescence peak wavelength longer than 5 mu m with a full-width at halfmaximum of 10 meV has been obtained. The compositional and temperature dependence of the PL spectra were studied. A band gap energy shift of 50 meV betwee n 5 and 300 K was observed. The results indicate the high quality of t he materials. Light emitting diodes with wavelength of 4.2 mu m at 77 K have been obtained. The potential applications for a light source op erating in 3-5 mu m were demonstrated.