RESONANT PHOTOLUMINESCENCE FROM MODULATION-DOPED INAS-GAAS QUANTUM DOTS

Authors
GUASCH C TORRES CMS LEDENTSOV NN BIMBERG D USTINOV VM KOPEV PS
Citation
C. Guasch et al., RESONANT PHOTOLUMINESCENCE FROM MODULATION-DOPED INAS-GAAS QUANTUM DOTS, Superlattices and microstructures, 21(4), 1997, pp. 509-516
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
21
Issue
4
Year of publication
1997
Pages
509 - 516
Database
ISI
SICI code
0749-6036(1997)21:4<509:RPFMIQ>2.0.ZU;2-P
Abstract
Resonant luminescence studies of InAs quantum dots (QDs) embedded in a GaAs matrix grown by molecular beam epitaxy are presented, showing ma rked differences for modulation-doped and undoped QDs and indicating t hat the doping leads to different exciton formation and carrier relaxa tion mechanisms. The LO-phonon assisted relaxation of excitons between sub-levels is identified for the undoped QDs whereas no such relaxati on mechanism is observed for the modulation-doped QDs. (C) 1997 Academ ic Press Limited.