DEEP LEVELS IN BETA-FESI2 N-SI HETEROJUNCTIONS/

Deep levels in beta-FeSi2/n-Si heterojunctions are investigated by dee p level transient spectroscopy (DLTS) measurements. The results reveal the presence of defect states in the Si layer, located close to the i nterface, with activation energies from the conduction band edge DELTA E1=0.50 eV and DELTAE2=0.53 eV and capture cross-sections sigma1=2.4x1 0(-14) cm2 and sigma2=2.1x10(-14) cm2, respectively. Carrier depth pro files, obtained by capacitance-voltage measurements, support the exist ence of these deep traps. It is suggested that the deep traps originat e from Fe diffused into the Si during the formation of the silicide.