OPTICAL-PROPERTIES OF STRAINED ALGAN AND GAINN ON GAN

The composition of alloys in strained ternary alloy layers, AlxGa1-xN (0 < x < 0.25) and Ga1-xInxN (0 < x < 0.20): on thick GaN was precisel y determined using the high-resolution X-ray diffraction profile. The band gap of strained AlGaN is found to increase almost linearly accord ing to the AlN molar fraction, while that of strained GaInN has a larg e bowing parameter of 3.2 eV.