MATERIALS DESIGN FOR THE FABRICATION OF LOW-RESISTIVITY P-TYPE GAN USING A CODOPING METHOD

On the basis of band-theoretical investigation using the augmented-sph erical-wave (ASW) method, we propose a valence-control method, the ''c odoping method'', to fabricate low-resistivity p-type GaN materials. p -type dopants lead to an increase in the electrostatic energy in GaN m aterials. This gives rise to destabilization of ionic charge distribut ions due to a shift, of N 2p levels towards higher energy regions. We clarified that codoping of n-type dopants, Si or O atoms, lead lo a st able p-type GaN:Mg atom material and investigated differences in the r oles of Si-and O on the fabrication of low-resistivity p-type GaN mate rials.