HIGH-PHOTOSENSITIVITY A-SIGEH FILMS PREPARED BY RF GLOW-DISCHARGE PLASMA CVD METHOD

Authors
ZHANG FQ SONG ZZ GUO YP CHEN GH
Citation
Fq. Zhang et al., HIGH-PHOTOSENSITIVITY A-SIGEH FILMS PREPARED BY RF GLOW-DISCHARGE PLASMA CVD METHOD, Solar energy materials and solar cells, 29(3), 1993, pp. 195-200
Citations number
11
Categorie Soggetti
Energy & Fuels","Material Science
Journal title
Solar energy materials and solar cells → ACNP
ISSN journal
09270248
Volume
29
Issue
3
Year of publication
1993
Pages
195 - 200
Database
ISI
SICI code
0927-0248(1993)29:3<195:HAFPBR>2.0.ZU;2-0
Abstract
Highly photosensitive and narrow band gap a-SiGe:H films have been pre pared by the RF glow discharge plasma CVD method. The photosensitivity was 2.01 X 10(5) for the film with an optical band gap of E(g) = 1.47 eV. H-2 dilution and a relatively high RF power are attributed to the improving of the optoelectrical properties. Thermally induced changes of the a-SiGe:H films have been also investigated.