GROWTH AND CRYSTALLINITY OF FERROELECTRIC BAMGF4 FILMS ON (111)-ORIENTED PT FILMS

Growth of well (Ill)-oriented Pt films on SiO2/Si(100) substrates and the crystallinity of BaMgF4 films grown on the Pt(111)/SiO2/Si(100) su bstrates have been investigated. It was found by X-ray diffraction ana lysis that well (111)-oriented Pt films with a best full-width at half maximum (FWHM) of 0.92 degrees were grown by the radio frequency (RF) magnetron sputtering method. It was also found that (120)-oriented Ba MgF4 films were grown on Pt(111)/SiO2/Si(100) substrates at temperatur es oi about 550 degrees C and that the crystallinity of these BaMgF4 f ilms improved as the FWHM of the Pt(lll) diffraction peak decreased. T he best FWHM obtained for a BaMgF4 film grown on a Pt(111)/SiO2/Si(100 ) substrate was 0.97 degrees, and crystallites in the BaMgF4 films gro wn on Pt(lll)/SiO2/Si(100) substrates were larger (about 0.4 mu m(2)) than those in-the BaMgF4 films grown on Si(111) substrates.