M. Govindarajan et Sr. Forrest, DESIGN CONSIDERATIONS FOR WIDE-BAND P-I-N HBT MONOLITHIC TRANSIMPEDANCE OPTICAL RECEIVERS, Journal of lightwave technology, 11(2), 1993, pp. 367-378
A comprehensive circuit and device model has been developed for the de
sign of wide-band transimpedance optical receivers using heterojunctio
n bipolar transistors (HBT's). Based on this model, we determine the d
evice and circuit design that gives the highest combination of bandwid
th, sensitivity, and stability. For optoelectronic integration, it is
convenient to use the collector-base junction of the HBT device struct
ure to fabricate the p-i-n detector. A resulting transistor transit-ti
me effect is shown to cause shunt peaking in the closed-loop response
or, at worst, instability. It is shown that the photodiode stray capac
itance is not a major source of sensitivity degradation in flip-chip t
ransimpedance receivers. Optimum device structures are determined for
InP- and GaAs-based HBT receivers with fine-line as well as relaxed ge
ometries.