TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN

Authors
HEGDE RI FIORDALICE RW TOBIN PJ
Citation
Ri. Hegde et al., TINCL FORMATION DURING LOW-TEMPERATURE, LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION OF TIN, Applied physics letters, 62(19), 1993, pp. 2326-2328
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
19
Year of publication
1993
Pages
2326 - 2328
Database
ISI
SICI code
0003-6951(1993)62:19<2326:TFDLLC>2.0.ZU;2-M
Abstract
We report for the first time the existence of the titanium nitride chl oride (TiNCl) compound in low-temperature (400-degrees-C) low-pressure chemical vapor deposition (LPCVD) TiN films deposited using TiCl4/NH3 chemistry. Thin-film x-ray diffraction and Auger electron spectroscop y was used in the film characterization. Physical, chemical, and elect rical properties of the resulting low-temperature LPCVD TiN films are discussed.