HALL-EFFECT MEASUREMENTS ON BORON-DOPED, HIGHLY ORIENTED DIAMOND FILMS GROWN ON SILICON VIA MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION

A highly oriented, (100) textured diamond film was grown on a Si subst rate, followed by the deposition of an epitaxial boron-doped layer for electrical characterization. Temperature-dependent Hall effect measur ements were performed between 180 and 440 K. The 165 cm2/V . s hole mo bility measured at room temperature is approximately five times greate r than the highest reported mobilities for polycrystalline diamond. Th e relative improvement in the electronic quality of diamond films grow n on Si, due to the reduction of misorientation and grain boundary ang les, has been demonstrated. X-ray diffraction pole measurements were p erformed on the (100) oriented film in order to quantify the degree of misorientation.