SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS

The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flas h lamp in an ultraclean low-pressure environment. About 0.4 atomic-lay er epitaxy per flash-lamp light shot was observed on Si(100) at a subs trate temperature of 385-degrees-C and at SiH4 Partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pre ssure and shot-to-shot time interval are expressed by the Langmuir ads orption type equation, assuming that the total adsorption site density is equal to the surface atom density.