ATOMIC LAYER EPITAXY OF GAAS WITH A 2-MU-M H GROWTH-RATE/

Atomic layer epitaxy (ALE) of GaAs with a growth rate as high as 2 mum /h was achieved in a specially designed reactor based on the rotating susceptor concept. High deposition rates are made possible by a unique partition system that permits rapid rotation of substrates between si multaneous streams of columns III and V reactant gases. Mixing of the gas streams at high rotational speeds is avoided by the gas shearing e ffect provided by the partition system. Background carbon levels in th e GaAs films with high growth rates varied from mid 10(17) cm-3 at 650 -degrees-C to mid 10(18) cm-3 at 550-degrees-C. When the growth rate w as reduced to 0.3 mum/h, carbon background doping in the 10(15) cm-3 w as achieved.