HIGH-TEMPERATURE CHARACTERISTICS OF INGAASP INP LASER STRUCTURES/

We investigate the high temperature performance of conventional separa te confinement and lattice matched and compressively strained multi-qu antum-well InGaAsP lasers emitting at 1.3 mum. Low threshold buried he terostructure lasers operate reproducibly at temperatures as high as 1 30-degrees-C. The rate of threshold change with temperature is describ ed by T0 approximately 45-degrees-55-degrees for both conventional and quantum well lasers. The rate of change is not influenced by any modi fications in the active layer structure. In contrast, excellent correl ation is observed between the active layer structure, parametrized as the threshold gain, and the peak cw operating temperature.