DIRECT DETERMINATION OF THE AMBIPOLAR DIFFUSION LENGTH IN STRAINED IN(X)GA(1-X)AS INP QUANTUM-WELLS BY CATHODOLUMINESCENCE/

Authors
LEE RB VAHALA KJ ZAH CE BHAT R
Citation
Rb. Lee et al., DIRECT DETERMINATION OF THE AMBIPOLAR DIFFUSION LENGTH IN STRAINED IN(X)GA(1-X)AS INP QUANTUM-WELLS BY CATHODOLUMINESCENCE/, Applied physics letters, 62(19), 1993, pp. 2411-2412
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
19
Year of publication
1993
Pages
2411 - 2412
Database
ISI
SICI code
0003-6951(1993)62:19<2411:DDOTAD>2.0.ZU;2-O
Abstract
The ambipolar diffusion length is measured in strained InxGa1-xAs/InP quantum wells for several mole fractions in the interval 0.3<x<0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with results of carrier lifetime experiments by M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chu ang [Appl. Phys. Lett. 62, 166 (1993)].