STRAIN EFFECTS IN THE INTERSUBBAND TRANSITIONS OF NARROW INGAAS QUANTUM-WELLS

Authors
PENG LH SMET JH BROEKAERT TPE FONSTAD CG
Citation
Lh. Peng et al., STRAIN EFFECTS IN THE INTERSUBBAND TRANSITIONS OF NARROW INGAAS QUANTUM-WELLS, Applied physics letters, 62(19), 1993, pp. 2413-2415
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
19
Year of publication
1993
Pages
2413 - 2415
Database
ISI
SICI code
0003-6951(1993)62:19<2413:SEITIT>2.0.ZU;2-S
Abstract
Internal uniaxial stress effects on the degenerate P-like C2 subband B loch states of Si-doped (001) InGaAs single quantum wells (SQWs) have been studied using polarization-resolved infrared spectroscopy. It is found that a tetragonal strain perturbation of the crystal potential p roduces a splitting between the TM and TE active intersubband transiti ons. The magnitude of the linear strain intersubband deformation poten tial of InGaAs quantum wells is 3 eV.