Dislocations produced in Ge by. high-temperature indentation have been
studied using high-resolution transmission electron microscopy. An in
teresting defect has been observed which consists of a 1/6[411] partia
l dislcation separated by an intrinsic stacking fault from a 1/6[121]
30-degrees partial. The unusual 1/6[411] partial dislocation forms by
the reaction of a perfect 1/2[110] 60-degrees and 1/6[211] 90-degrees
partial dislocation belonging to different glide planes.