The effects of aluminium on the electro-optical properties of high qua
lity sputtered hydrogenated amorphous germanium are reported. Two dist
inct effects are found: at low concentrations, the aluminium atoms act
as active p-type dopants making the Fermi level shift towards mid-gap
compensating the intrinsically n-type material. At higher concentrati
ons, a hydrogenated germanium-aluminium alloy is formed. The optical g
ap shrinks and transport is probably dominated by holes.