POSSIBILITY OF COMPARING THE TUNNELING DENSITY OF STATES OF BISRCACUO(2212) WITH THE BCS MODEL

Current-voltage characteristics of S-I-S tunnel junctions fabricated f rom high-quality BiSrCaCuO (2212) single crystals have been measured. A method is proposed for extracting the tunneling density of states N( E) from experimental data. Allowance is made for a finite quasiparticl e lifetime. The functions N(E) which have been found can be described well by the BCS model if one additional parameter, GAMMA, is introduce d. The temperature dependence of the energy gap 2DELTA is the BCS 2DEL TA (T) dependence with a ratio 2DELTA(0)/(k(B)T(c)) of 6.7 +/- 0.3.