H. Harjanto et al., RESOLUTION OF ANOMALIES IN THE GEOMETRY AND VIBRATIONAL FREQUENCIES OF MONOBROMOSILYLENE (HSIBR) BY PULSED DISCHARGE JET SPECTROSCOPY, The Journal of chemical physics, 105(23), 1996, pp. 10189-10200
A detailed examination of the ground and first excited singlet electro
nic states of HSiBr has been carried out through analysis of the 500-4
00 nm band system, using pulsed discharge jet and laser-induced fluore
scence techniques. HSiBr and DSiBr have been produced by an electric d
ischarge through SiHBr3 and SiDBr3 vapor in argon. Rotational analysis
of the 0(0)(0) bands yielded the structural parameters r(0) ''(SiH) =
1.518(1) Angstrom, r(0) ''(SiBr) = 2.237(1) Angstrom, theta(0) '' = 9
3.4(3)degrees, r(0)'(SiH) = 1.497(10) Angstrom, r(0) ''(SiBr) = 2.208(
2) Angstrom, and theta(0)' = 116.4(7)degrees. Previous anomalies in th
e geometric parameters and vibrational frequencies have been resolved
and the ground state bond lengths and vibrational frequencies are foun
d to be comparable to those of SiH and SiBr. Harmonic force fields hav
e been determined for the ground and excited states and the radiative
Lifetime of HSiBr has been measured to be 598 +/- 18 ns. (C) 1996 Amer
ican Institute of Physics.