INTERPLAY OF THE ATOMIC AND ELECTRONIC-STRUCTURE IN LIQUID AND AMORPHOUS AL-GE ALLOYS

Citation
R. Gampp et al., INTERPLAY OF THE ATOMIC AND ELECTRONIC-STRUCTURE IN LIQUID AND AMORPHOUS AL-GE ALLOYS, Journal of non-crystalline solids, 156, 1993, pp. 236-240
Citations number
31
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00223093
Volume
156
Year of publication
1993
Part
1
Pages
236 - 240
Database
ISI
SICI code
0022-3093(1993)156:<236:IOTAAE>2.0.ZU;2-M
Abstract
It is well known that in simple disordered metallic systems maxima of the structure factor, S(q), are related to minima in the electronic de nsity of states (DOS). Photoelectron spectroscopy measurements of liqu id Al75Ge25, liquid Al65Ge35, and amorphous Al68Ge32 are presented, sh owing a lowering of the DOS at the Fermi energy in comparison to the p ure liquid alloy constituents. The depression is large in the amorphou s and small in the liquid state, where it vanishes with increasing tem perature. This feature is explained as being induced by the atomic str ucture. The temperature dependence of the structure-induced depression of the DOS is a consequence of the temperature dependence of the stru cture factor itself.