Vanadium, niobium, and tantalum nitride thin films were synthesized fr
om homoleptic dialkylamido metal complexes and ammonia by atmospheric
pressure chemical vapor deposition with high growth rates at low subst
rate temperatures (200-400-degrees-C). Depositions were successfully c
arried out on silicon, glass, vitreous carbon, and boron substrates. T
he films showed good adhesion to the substrates and were chemically re
sistant. The films were characterized by Rutherford backscattering spe
ctrometry, X-ray photoelectron spectroscopy, ellipsometry, and transmi
ssion electron microscopy. Reflectance and transmission spectra for th
e tantalum nitride films were also recorded. Hydrogen in the films was
determined by hydrogen forward recoil scattering spectrometry. The va
nadium nitride coatings were slightly nitrogen-rich VN (N/M ratio 1.05
-1.15). They were polycrystalline as deposited and displayed metallic
properties. The niobium nitride films had N/M ratios of 1.35 +/- 0.05
and were golden colored by reflection and conducting. In contrast, the
tantalum nitride films had N/M ratios of 1.7 +/- 0.1 and were transpa
rent, pale yellow colored in transmission and insulating. The stoichio
metry and physical properties suggest that the films consist of Ta3N5.
The hydrogen content of the films diminished as the deposition temper
ature increased, but all had significant amounts of hydrogen present.