ER3-BEAM EPITAXY( DOPING OF CAF2 LAYERS GROWN BY MOLECULAR)

Authors
DARAN E BAUSA LE MUNOZYAGUE A FONTAINE C
Citation
E. Daran et al., ER3-BEAM EPITAXY( DOPING OF CAF2 LAYERS GROWN BY MOLECULAR), Applied physics letters, 62(21), 1993, pp. 2616-2618
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
21
Year of publication
1993
Pages
2616 - 2618
Database
ISI
SICI code
0003-6951(1993)62:21<2616:EEDOCL>2.0.ZU;2-#
Abstract
Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 5 wt % is demonstrated on CaF2 substrates. Separat ed effusion cells containing CaF2 and ErF3 were used. The photolumines cence spectra of the samples show emissions from centers of different symmetry identified by reference to published results obtained on CaF2 :Er3+ bulk crystals. No influence of the substrate orientation-(100) o r (111)-on the luminescence characteristics was observed.