MULTILAYER STRUCTURE FOR EPITAXIAL-GROWTH OF OXIDE-FILMS ON SI WITH AN UNDERLYING ELECTRODE

Authors
HUNG LS BOSWORTH LA
Citation
Ls. Hung et La. Bosworth, MULTILAYER STRUCTURE FOR EPITAXIAL-GROWTH OF OXIDE-FILMS ON SI WITH AN UNDERLYING ELECTRODE, Applied physics letters, 62(21), 1993, pp. 2625-2627
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
21
Year of publication
1993
Pages
2625 - 2627
Database
ISI
SICI code
0003-6951(1993)62:21<2625:MSFEOO>2.0.ZU;2-S
Abstract
Multilayers of CaF2, Pd, and Pt were epitaxially grown on HF treated ( 100)Si by sequential deposition of the desired materials in ultrahigh vacuum. This structure is suitable for epitaxial growth of oxide films on Si with an underlying electrode. The epitaxial layer CaF2 effectiv ely acts as a barrier to impede metal-substrate reaction, and the meta l bilayer Pd/Pt forms an epitaxial electrode with good adhesion to the underlying substrate and high resistance to oxidation. KNbO3 deposite d on this multilayer structure showed epitaxial growth in a mixed (001 )/(110) orientation.