DIRECT MEASUREMENT OF NEAR-BAND-GAP ELECTROREFRACTION IN AL0.3GA0.7ASGAAS/AL0.3GA0.7AS THIN-FILM STRUCTURES/

Authors
CALHOUN KH JOKERST NM
Citation
Kh. Calhoun et Nm. Jokerst, DIRECT MEASUREMENT OF NEAR-BAND-GAP ELECTROREFRACTION IN AL0.3GA0.7ASGAAS/AL0.3GA0.7AS THIN-FILM STRUCTURES/, Applied physics letters, 62(21), 1993, pp. 2673-2675
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
21
Year of publication
1993
Pages
2673 - 2675
Database
ISI
SICI code
0003-6951(1993)62:21<2673:DMONEI>2.0.ZU;2-Y
Abstract
We report the first direct measurement of near-band-gap Franz-Keldysh electrorefraction in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As p-i-n single-cryst al thin-film Fabry-Perot structures with semitransparent metallic mirr or contacts. These measurements are performed for various reverse bias es and at photon energies ranging from 9 to less than 1 meV from the G aAs band edge. The measured refractive index variation is several time s larger than that predicted by the effective mass approximation theor y.