SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE

Authors
DAY HC ALLEE DR
Citation
Hc. Day et Dr. Allee, SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE, Applied physics letters, 62(21), 1993, pp. 2691-2693
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
21
Year of publication
1993
Pages
2691 - 2693
Database
ISI
SICI code
0003-6951(1993)62:21<2691:SAOOSW>2.0.ZU;2-T
Abstract
The use of a scanning force microscope with a metallized tip to do sel ective area oxidation of silicon is demonstrated. Sub-100 nm lines hav e been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumpt ion in SiO2 formation.