DEFORMATION-INDUCED DEEP LEVELS IN P-CDTE

Authors
HUMMELGEN IA SCHROTER W
Citation
Ia. Hummelgen et W. Schroter, DEFORMATION-INDUCED DEEP LEVELS IN P-CDTE, Applied physics letters, 62(21), 1993, pp. 2703-2704
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
21
Year of publication
1993
Pages
2703 - 2704
Database
ISI
SICI code
0003-6951(1993)62:21<2703:DDLIP>2.0.ZU;2-E
Abstract
Alpha and beta dislocations are separately investigated in p-CdTe by d eep level transient spectroscopy. Two lines, whose amplitudes increase with increasing dislocation density are found. The defect concentrati on is found to be higher in case of beta dislocations. One line, at E( v) + 0.44 eV, is Gaussian broadened, while the second, at E(v) + 0.35 eV, shows unusual capture characteristics.