HETEROEPITAXIAL GROWTH OF INP IN0.52GA0.48AS STRUCTURES ON GAAS (100)BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

High quality In0.52Ga0.48As, InP, and In0.52Ga0.4gAs/InP single quantu m wells were grown on GaAs (100) by gas-source molecular beam epitaxy (GSMBE) with a 2 mum thick InxGa1-xAs buffer layer where x was linearl y graded from 0 to 0.52. Reflection high-energy electron diffraction p atterns and specular beam intensity oscillations showed that the growt h mode of In0.52Ga0.48As and InP were layer by layer despite the latti ce mismatch (DELTAa/a = 3.8%) between InP and GaAs. Photoluminescence line widths at 10 K of a 1-mum thick InP and a 5-nm wide In0.52Ga0.48A s/InP single quantum well are 4.9 and 10 meV, respectively, which are comparable to the values measured from similar structures grown lattic e matched on an InP substrate (3.5 and 7 meV, respectively) by the sam e GSMBE system. The quantum-well luminescence intensity is also compar able to lattice-matched samples.