GAAS SINGLE-DOMAIN GROWTH ON EXACT (100) SI SUBSTRATE

Authors
SPRUNG KR WILKE K HEYMANN G VARRIO J PESSA M
Citation
Kr. Sprung et al., GAAS SINGLE-DOMAIN GROWTH ON EXACT (100) SI SUBSTRATE, Applied physics letters, 62(21), 1993, pp. 2711-2712
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
21
Year of publication
1993
Pages
2711 - 2712
Database
ISI
SICI code
0003-6951(1993)62:21<2711:GSGOE(>2.0.ZU;2-K
Abstract
Single-domain growth of a GaAs layer showing a relatively good crystal structure and specular surface has been demonstrated on a silicon sub strate which has been cut along an exact (100) plane. The substrate wa s patterned with a sawtooth grating using electron beam lithography, a nd the layers were grown by molecular beam epitaxy.