TEMPERATURE-DEPENDENCE OF THE CATHODOLUMINESCENCE THICKNESS MAP OF A QUANTUM-WELL

The one-monolayer thickness variation in GaAs/AlAs single quantum well s is mapped with cathodoluminescence (CL) microscopy at temperatures b etween 10 and 50 Y, As the temperature is raised slightly, the intensi ty of the luminescence peak of a thinner well increases in comparison with that of a one-monolayer thicker one, and the monochromatic CL ima ges of the former expand by about 1 mum. It is established that the si ze of the thinner well domains is underestimated at the low temperatur es generally employed. Scanning the specimen temperature makes it poss ible to accurately draw the CL map of the well thickness variation.