ANNEALING EFFECT IN INAS GAAS MULTIPLE-QUANTUM WELLS GROWN ON VARIOUSLY ORIENTED SUBSTRATES/

The effects of annealing InAs/GaAs multiple quantum well structures gr own by molecular beam epitaxy on variously oriented substrates have be en investigated by means of photoluminescence (PL) spectroscopy. PL pr operties of specimens are found to be strongly dependent on annealing temperature and substrate orientation. The annealing temperature depen dence of the emission lines made possible the assignment of the origin of these radiative recombination processes as well as the alloying pr ocess involved during the heat treatment. Further, the broad peaks at the lower-energy side show a blue-shift with increase of the annealing temperature, suggesting that dislocations or defects play a principal role in the inter-diffusion of the atoms at the hetero-interface.