P. Hlinomaz et al., COMPARISON OF PICTS MEASUREMENTS ON SI-GAAS INTERPRETED WITHIN GENERALIZED PHYSICAL MODELS, Solid state communications, 86(6), 1993, pp. 357-361
Experimental data measured by the Photo-Induced Current Transient Spec
troscopy (PICTS), i.e. the temperature positions of maxima in PICTS sp
ectra versus the time positions of boxcar gates, have been fitted with
in physical models with different stage of generalization. This proced
ure has been applied to several important deep levels observed in semi
insulating undoped and chromium doped GaAs crystals and the obtained r
esults have been compared with each other.