COMPARISON OF PICTS MEASUREMENTS ON SI-GAAS INTERPRETED WITHIN GENERALIZED PHYSICAL MODELS

Authors
HLINOMAZ P SMID V KRISTOFIK J
Citation
P. Hlinomaz et al., COMPARISON OF PICTS MEASUREMENTS ON SI-GAAS INTERPRETED WITHIN GENERALIZED PHYSICAL MODELS, Solid state communications, 86(6), 1993, pp. 357-361
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
86
Issue
6
Year of publication
1993
Pages
357 - 361
Database
ISI
SICI code
0038-1098(1993)86:6<357:COPMOS>2.0.ZU;2-H
Abstract
Experimental data measured by the Photo-Induced Current Transient Spec troscopy (PICTS), i.e. the temperature positions of maxima in PICTS sp ectra versus the time positions of boxcar gates, have been fitted with in physical models with different stage of generalization. This proced ure has been applied to several important deep levels observed in semi insulating undoped and chromium doped GaAs crystals and the obtained r esults have been compared with each other.