THE BAND OFFSET MEASUREMENT AT THE IN0.5GA0.5P GAAS HETEROJUNCTION BYUSING PROPERTIES OF TRANSITION-METAL/

Authors
JEONG BS PARK HK KIM SI LEE JH HWANG JS CHUNG CH PARK HL LEE HJ LIM H
Citation
Bs. Jeong et al., THE BAND OFFSET MEASUREMENT AT THE IN0.5GA0.5P GAAS HETEROJUNCTION BYUSING PROPERTIES OF TRANSITION-METAL/, Solid state communications, 86(6), 1993, pp. 373-376
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
86
Issue
6
Year of publication
1993
Pages
373 - 376
Database
ISI
SICI code
0038-1098(1993)86:6<373:TBOMAT>2.0.ZU;2-C
Abstract
It is well known that the energy level of a transition metal (TM) such as manganese is tied to the vacuum level rather than to a particular band extreme in semiconductors. Therefore, TM can be used as a common reference energy level in all the semiconductors. We have investigated for the first time the photoluminescence spectrum of Mn-doped In0.5Ga 0.5P/GaAs heterojunction and by using the Mn acceptor level in photolu minescence (PL) spectra, the fractional band offsets Q(c) and Q(v) for the In0.5Ga0.5P/GaAs heterojunction are determined as 0.63 and 0.37, respectively.