ALGAAS GAAS/ALGAAS THIN-FILM FABRY-PEROT MODULATOR ON A GLASS SUBSTRATE BY USING ALIGNABLE EPITAXIAL LIFT-OFF/

We describe the fabrication and operation of a novel surface-normal Al GaAs/GaAs/AlGaAs p-i-n Fabry-Perot optical modulator on glass. The thi n-film devices were separated from the GaAs growth substrate and depos ited onto a glass substrate by an alignable epitaxial lift-off techniq ue. Optical transmission measurements on these structures show a 3-dB contrast ratio over a 1.7-nm bandwidth with a maximum modulation of 3. 3 dB at 878 nm, the largest contrast ratio reported to date to our kno wledge for a surface-normal, double-heterostructure Franz-Keldysh modu lator.