Spontaneous emission from quantum-well excitons in a thin, high-refrac
tive-index dielectric layer embedded in a low-refractive-index bulk di
electric is studied as a function of the layer thickness and refractiv
e-index ratio. Total spontaneous emission rates for a thin layer decre
ase linearly with the index ratio for dipoles in the plane of the laye
r and as the fifth power of the index ratio for dipoles with orientati
ons perpendicular to the layer. These results are of interest in the d
esign of optical microstructures that control the exciton emission dyn
amics of semiconductor quantum wells.