SPONTANEOUS EMISSION FROM EXCITONS IN THIN DIELECTRIC LAYERS

Citation
St. Ho et al., SPONTANEOUS EMISSION FROM EXCITONS IN THIN DIELECTRIC LAYERS, Optics letters, 18(11), 1993, pp. 909-911
Citations number
14
Categorie Soggetti
Optics
Journal title
ISSN journal
01469592
Volume
18
Issue
11
Year of publication
1993
Pages
909 - 911
Database
ISI
SICI code
0146-9592(1993)18:11<909:SEFEIT>2.0.ZU;2-J
Abstract
Spontaneous emission from quantum-well excitons in a thin, high-refrac tive-index dielectric layer embedded in a low-refractive-index bulk di electric is studied as a function of the layer thickness and refractiv e-index ratio. Total spontaneous emission rates for a thin layer decre ase linearly with the index ratio for dipoles in the plane of the laye r and as the fifth power of the index ratio for dipoles with orientati ons perpendicular to the layer. These results are of interest in the d esign of optical microstructures that control the exciton emission dyn amics of semiconductor quantum wells.